Description
Item Description:
The Vishay SI1021R-T1-GE3 features: Halogen-free According to IEC 61249-2-21 Definition, TrenchFET® Power MOSFETs, High-Side Switching, Low On-Resistance: 4 omega, Low Threshold: – 2 V (typ.), Fast Switching Speed: 20 ns (typ.), Low Input Capacitance: 20 pF (typ.), Miniature Package, ESD Protected: 2000 V, Compliant to RoHS Directive 2002/95/EC. Its applications include: Drivers-Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc; Battery Operated Systems; Power Supply Converter Circuits; Solid-State Relays. Its benefits include: Ease in Driving Switches, Low Offset Voltage, Low-Voltage Operation, High-Speed Circuits, Easily Driven without Buffer, Small Board Area.
Product Specs:
| Brand | Vishay Siliconix |
| MPN | SI1021R-T1-GE3 |
| Model | Si1021R |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current – Continuous Drain (Id) @ 25°C | 190mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 15 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 23 pF @ 25 V |
| Power Dissipation (Max) | 250mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-75, SOT-416 |
