Description
Transistors/Power Field-Effect Transistors
Part Number: SSP6N60A
DERF ID #: 343883
Manufacturer: SAMSUNG
VOLTAGE: 600V
AMPS: 6A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB
Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.
Quantity | Discount (%) | Price |
---|---|---|
1 - 10 | — | $42.813 |
11 - 50 | 5 % | $40.672 |
51 - 100 | 9.75 % | $38.639 |
101 - 500 | 14.26 % | $36.707 |
501 - 1,000 | 18.55 % | $34.871 |
1,001 - 2,500 | 22.62 % | $33.128 |
2,501 - 4,999 | 26.49 % | $31.471 |
5,000+ | 30.17 % | $29.898 |
Transistors/Power Field-Effect Transistors
Part Number: SSP6N60A
DERF ID #: 343883
Manufacturer: SAMSUNG
VOLTAGE: 600V
AMPS: 6A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB