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SSP6N60A

Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.

SKU: 343883
Categories: ,

Pricing

Quantity Discount (%) Price
1 - 10 $42.813
11 - 50 5 % $40.672
51 - 100 9.75 % $38.639
101 - 500 14.26 % $36.707
501 - 1,000 18.55 % $34.871
1,001 - 2,500 22.62 % $33.128
2,501 - 4,999 26.49 % $31.471
5,000+ 30.17 % $29.898

Description

Transistors/Power Field-Effect Transistors

Part Number: SSP6N60A
DERF ID #: 343883
Manufacturer: SAMSUNG

VOLTAGE: 600V
AMPS: 6A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB


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