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SI4800BDY-T1-E3

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N-Channel Reduced Qg, Fast Switching MOSFET

SKU: 557302
Categories: ,

Description

Item Description:

N-Channel 30 V 6.5A (Ta) 1.3W (Ta) Surface Mount 8-SOIC

Product Specs:

Brand Vishay Siliconix
MPN SI4800BDY-T1-E3
Model Si4800BDY TrenchFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current – Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 18.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 5 V
Vgs (Max) ±25V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154″, 3.90mm Width)

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