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S29GL512S11DHI010

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FLASH – NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9×9)

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Description

Item Description:

The S29GL01G/512/256/128S are MIRRORBIT™ Eclipse flash products fabricated on 65-nm process technology. These devices offer a fast page access time as fast as 15 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Product Specs:

Brand Infineon Technologies
MPN S29GL512S11DHI010
Model S29GL512S
Density 512 MBit
Family GL-S
Initial Access Time 110 ns
Interface Frequency (SDR/DDR) (MHz) NA
Interfaces Parallel
Lead Ball Finish Sn/Ag/Cu
Operating Temperature   min  max -40 °C   85 °C
Operating Voltage   min  max 3 V   2.7 V   3.6 V
Page Access Time 15 ns
Peak Reflow Temp 260 °C
Qualification Industrial

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