Description
Item Description:
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
Product Specs:
| Brand | Mitsubishi Electric |
| MPN | RD12MVS1-T212 |
| Model | RD12MVS1 |
| High Power Gain | Pout>11.5W, Gp>12dB@Vdd=7.2V,f=175MHz |
| High Efficiency | 57%typ. (175MHz) |
| Drain to Source Voltage | 50 V |
| Gate to Source Voltage | -5/+10 V |
| Drain Current | 4 A |
| Input Power | 2 W |
| Channel Dissipation | 50 W |
| Junction Temperature | 150 °C |
| Storage Temperature | -40 to +125 °C |
| Thermal Resistance | 2.5 °C/W |
| Zero Gate Voltage Drain Current | 10 uA |
| Gate to Source Leak Current | 1 uA |
| Gate Threshold Voltage | 1.8 – 4.4 V |
| Output Power | 11.5 – 12 W |
| Drain Efficiency | 55 – 57 % |
