Description
Item Description:
Designed for use in low voltage, high speed switching applications; Ultra Low On−Resistance Provides: Higher Efficiency and Extends Battery Life − RDS(on) = 0.048 , VGS = 10 V (Typ), − RDS(on) = 0.065 , VGS = 4.5 V (Typ); Miniature SO−8 Surface Mount Package − Saves Board Space; Diode is Characterized for Use in Bridge Circuits; Diode Exhibits High Speed, with Soft Recovery; NVMD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*; These Devices are Pb−Free and are RoHS Compliant.
Product Specs:
| Brand | Onsemi |
| MPN | NTMD4N03R2G |
| Model | NTMD4N03 |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current – Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 20V |
| Power – Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
