Description
Item Description:
This Power MOSFET is designed to withstand high energy in the Avalanche and Commutation Modes. Designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.
Product Specs:
Brand | Onsemi |
MPN | NTD2955T4G |
Model | NTD2955 |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current – Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 180mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
Power Dissipation (Max) | 55W (Tj) |
Operating Temperature | -55°C ~ 155°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |