Description
Item Description:
This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.
Product Specs:
| Brand | Onsemi |
| MPN | MBR120LSFT1G |
| Model | MBR120LSF |
| Technology | Schottky |
| Voltage – DC Reverse (Vr) (Max) | 20 V |
| Current – Average Rectified (Io) | 1A |
| Voltage – Forward (Vf) (Max) @ If | 450 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current – Reverse Leakage @ Vr | 400 µA @ 20 V |
| Mounting Type | Surface Mount |
| Package / Case | SOD-123F |
| Operating Temperature – Junction | -55°C ~ 125°C |
