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IXTY01N100

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High Voltage Power MOSFET, N-Channel Enhancement Mode

SKU: 561830
Categories: ,

Description

Item Description:

N-Channel 1000 V 100mA (Tc) 25W (Tc) Surface Mount TO-252AA

Product Specs:

Brand IXYS
MPN IXTY01N100
Model IXTY01N100
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current – Continuous Drain (Id) @ 25°C 100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 6.9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 54 pF @ 25 V
Power Dissipation (Max) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63

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