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IRFR320

Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.

Pricing

Quantity Discount (%) Price
1 - 10 $0.772
11 - 50 4.92 % $0.734
51 - 100 9.72 % $0.697
101 - 500 14.25 % $0.662
501 - 1,000 18.52 % $0.629
1,001 - 2,500 22.54 % $0.598
2,501 - 4,999 26.42 % $0.568
5,000+ 30.18 % $0.539

Description

Power Field-Effect Transistors/Transistors

Part Number: IRFR320
DERF ID #: 31733
Manufacturer: SAMSUNG

VOLTAGE: 400V
AMPS: 3.1A I(D)
CHANNEL: N-Channel
PACKAGE: TO-252AA


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