Description
Power Field-Effect Transistors/Transistors
Part Number: IRFR210
DERF ID #: 21873
Manufacturer: SAMSUNG
VOLTAGE: 200V
AMPS: 2.7A I(D)
CHANNEL: N-Channel
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.
Quantity | Discount (%) | Price |
---|---|---|
1 - 10 | — | $0.091 |
11 - 50 | 5.49 % | $0.086 |
51 - 100 | 9.89 % | $0.082 |
101 - 500 | 14.29 % | $0.078 |
501 - 1,000 | 18.68 % | $0.074 |
1,001 - 2,500 | 23.08 % | $0.07 |
2,501 - 4,999 | 26.37 % | $0.067 |
5,000+ | 30.77 % | $0.063 |
Power Field-Effect Transistors/Transistors
Part Number: IRFR210
DERF ID #: 21873
Manufacturer: SAMSUNG
VOLTAGE: 200V
AMPS: 2.7A I(D)
CHANNEL: N-Channel