Description
Power Field-Effect Transistors/Transistors
Part Number: FQD19N10TM
DERF ID #: 514414
Manufacturer: ON SEMICONDUCTOR
VOLTAGE: 100V
AMPS: 15.6A I(D)
CHANNEL: N-Channel
PACKAGE: TO-252
FQD19N10TM
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.
Pricing
| Quantity | Discount (%) | Price |
|---|---|---|
| 1 - 10 | — | $0.846 |
| 11 - 50 | 4.96 % | $0.804 |
| 51 - 100 | 9.69 % | $0.764 |
| 101 - 500 | 14.3 % | $0.725 |
| 501 - 1,000 | 27.07 % | $0.617 |
| 1,001 - 2,500 | 38.06 % | $0.524 |
| 2,501 - 4,999 | 53.55 % | $0.393 |
| 5,000+ | 55.91 % | $0.373 |
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