Description
Item Description:
The CY7C1041DV33 is a high performance CMOS Static RAM organized as 256 K words by 16-bits. To write to the device, take chip enable (CE) and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O0 to I/O7) is written into the location specified on the address pins (A0 to A17).If byte high enable (BHE) is LOW, then data from I/O pins (I/O8to I/O15) is written into the location specified on the address pins(A0 to A17).To read from the device, take chip enable (CE) and output enable(OE) LOW while forcing the write enable (WE) HIGH. If BLE is LOW, then data from the memory location specified by the address pins appears on I/O0 to I/O7. If BHE is LOW, then data from memory appears on I/O8 to I/O15. See the Truth Table on page 10 for a complete description of read and write modes. The input and output pins (I/O0 to I/O15) are placed in a high impedance state when the device is deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled(BHE, BLE HIGH), or during a write operation (CE LOW and WELOW).The CY7C1041DV33 is available in a standard 44-pin 400-milwide SOJ and 44-pin TSOP II package with center power and ground (revolutionary) pinout and a 48-ball FBGA package.
Product Specs:
| Brand | Cypress Semiconductor |
| MPN |
CY7C1041DV33-10BVXIT |
| Model | CY7C1041DV33 |
| Memory Size | 4 Mbit |
| Organization | 256 k x 16 |
| Access Time | 10 ns |
| Interface Type | Parallel |
| Supply Voltage – Max | 3.6 V |
| Supply Voltage – Min | 3 V |
| Supply Current – Max | 90 mA |
| Operating Temperature | -40 C to +85 C |
| Mounting Style | SMD/SMT |
| Package / Case | VFBGA-48 |
| Memory Type | SDR |
| Moisture Sensitive | Yes |
| Type | Asynchronous |
| Unit Weight | 0.007873 oz |
