Description
Item Description:
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as an eight-bank DRAM for the x16 configuration and as a 16-bank DRAM for the x4 and x8 configurations. The DDR4 SDRAM uses an 8n-prefetch architecture to achieve high-speed operation. The 8n-prefetch architecture is combined with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins.
Product Specs:
| Brand | Micron |
| MPN | MT40A256M16GE-083E-T:B |
| Model | MT40A256M16GE-083E IT:B |
| Component Density | 4Gb |
| Speed | 1200MHz |
| MT/s | 2400MTPS |
| I/O Voltage | 1.2 VOLTS |
| Operating Temp | -40C to +95C |
| Bus Width | x16 |
| CAS Latency | CL = 16 |
| Pin Count | 96-ball |
| Component Config | 256M x16 |
| Package Dimension (W x L x H) mm | 9.00 x 14.00 x 1.20 |
| Number of Components | 1 |
