Description
Power Field-Effect Transistors/Transistors
Part Number: IRF610
DERF ID #: 17764
Manufacturer: SILICON SIGNATURE
VOLTAGE: 200V
AMPS: 3.3A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB
IRF610
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.
Pricing
| Quantity | Discount (%) | Price |
|---|---|---|
| 1 - 10 | — | $0.61 |
| 11 - 50 | 4.92 % | $0.58 |
| 51 - 100 | 9.67 % | $0.551 |
| 101 - 500 | 14.26 % | $0.523 |
| 501 - 1,000 | 18.52 % | $0.497 |
| 1,001 - 2,500 | 22.62 % | $0.472 |
| 2,501 - 4,999 | 26.39 % | $0.449 |
| 5,000+ | 30.16 % | $0.426 |
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