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IRFR210

Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.

Pricing

Quantity Discount (%) Price
1 - 10 $0.091
11 - 50 5.49 % $0.086
51 - 100 9.89 % $0.082
101 - 500 14.29 % $0.078
501 - 1,000 18.68 % $0.074
1,001 - 2,500 23.08 % $0.07
2,501 - 4,999 26.37 % $0.067
5,000+ 30.77 % $0.063

Description

Power Field-Effect Transistors/Transistors

Part Number: IRFR210
DERF ID #: 21873
Manufacturer: SAMSUNG

VOLTAGE: 200V
AMPS: 2.7A I(D)
CHANNEL: N-Channel


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