Description
Power Field-Effect Transistors/Transistors
Part Number: IRFR320
DERF ID #: 31733
Manufacturer: SAMSUNG
VOLTAGE: 400V
AMPS: 3.1A I(D)
CHANNEL: N-Channel
PACKAGE: TO-252AA
Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.
Quantity | Discount (%) | Price |
---|---|---|
1 - 10 | — | $0.772 |
11 - 50 | 4.92 % | $0.734 |
51 - 100 | 9.72 % | $0.697 |
101 - 500 | 14.25 % | $0.662 |
501 - 1,000 | 18.52 % | $0.629 |
1,001 - 2,500 | 22.54 % | $0.598 |
2,501 - 4,999 | 26.42 % | $0.568 |
5,000+ | 30.18 % | $0.539 |
Power Field-Effect Transistors/Transistors
Part Number: IRFR320
DERF ID #: 31733
Manufacturer: SAMSUNG
VOLTAGE: 400V
AMPS: 3.1A I(D)
CHANNEL: N-Channel
PACKAGE: TO-252AA