Description
Power Field-Effect Transistors/Transistors
Part Number: IRF710
DERF ID #: 46760
Manufacturer: SAMSUNG
VOLTAGE: 400V
AMPS: 2A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB
IRF710
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.
Pricing
| Quantity | Discount (%) | Price |
|---|---|---|
| 1 - 10 | — | $0.499 |
| 11 - 50 | 5.01 % | $0.474 |
| 51 - 100 | 9.82 % | $0.45 |
| 101 - 500 | 14.43 % | $0.427 |
| 501 - 1,000 | 18.64 % | $0.406 |
| 1,001 - 2,500 | 22.65 % | $0.386 |
| 2,501 - 4,999 | 26.45 % | $0.367 |
| 5,000+ | 30.26 % | $0.348 |
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