Description
Power Field-Effect Transistors/Transistors
Part Number: IRF723
DERF ID #: 23075
Manufacturer: SAMSUNG
VOLTAGE: 350V
AMPS: 2.8A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB
This part is in stock and is ready to ship, however web pricing is unavailable. Please call 845-790-9900 for a quote or send an RFQ through our “Request for Quote” tab.
Power Field-Effect Transistor, 2.8A I(D), 350V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Power Field-Effect Transistors/Transistors
Part Number: IRF723
DERF ID #: 23075
Manufacturer: SAMSUNG
VOLTAGE: 350V
AMPS: 2.8A I(D)
CHANNEL: N-Channel
PACKAGE: TO-220AB