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MGSF2N02ELT1G

Power Field-Effect Transistor, 2.8A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.

SKU: 341137
Categories: ,

Pricing

Quantity Discount (%) Price
1 - 10 $0.396
11 - 50 5.05 % $0.376
51 - 100 9.85 % $0.357
101 - 500 14.14 % $0.34
501 - 1,000 35.61 % $0.255
1,001 - 2,500 55.05 % $0.178
2,501 - 4,999 68.43 % $0.125
5,000+ 72.73 % $0.108

Description

Transistors/Power Field-Effect Transistors

Part Number: MGSF2N02ELT1G
DERF ID #: 341137
Manufacturer: ON SEMICONDUCTOR

VOLTAGE: 20V
AMPS: 2.8A I(D)
CHANNEL: N-Channel
PACKAGE: TO-236


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