Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8, 8 PIN
Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.
| Quantity | Discount (%) | Price |
|---|---|---|
| 1 - 10 | — | $1.50 |
| 11 - 50 | 10 % | $1.35 |
| 51 - 100 | 19 % | $1.215 |
| 101 - 500 | 27.07 % | $1.094 |
| 501 - 1,000 | 34.4 % | $0.984 |
| 1,001 - 2,500 | 40.93 % | $0.886 |
| 2,501 - 5,000 | 44.47 % | $0.833 |
| 5,001+ | 47.8 % | $0.783 |
Type Designator: IRF7416
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 2.5 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 61 nC
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: SO8
