Description
Transistors/Power Field-Effect Transistors
Part Number: FQD2N80TM
DERF ID #: 412951
Manufacturer: –
VOLTAGE: 800V
AMPS: 1.8A I(D)
CHANNEL: N-Channel
PACKAGE TYPE: TO-252
FQD2N80TM
Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Due to global semiconductor and component shortages. Web pricing may not be up to date and is subject to change.
Pricing
| Quantity | Discount (%) | Price |
|---|---|---|
| 1 - 10 | — | $0.304 |
| 11 - 50 | 9.87 % | $0.274 |
| 51 - 100 | 19.08 % | $0.246 |
| 101 - 500 | 26.97 % | $0.222 |
| 501 - 1,000 | 34.54 % | $0.199 |
| 1,001 - 2,500 | 40.79 % | $0.18 |
| 2,501 - 5,000 | 45.07 % | $0.167 |
| 5,001+ | 49.01 % | $0.155 |
Contact Us
Accepted Payments
